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IPB06CNE8N
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DataSheet
General Description
IPB06CNE8N Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Continuous Drain Current, Tc = 25 | ID | 100 | A |
| Continuous Drain Current,Tc = 100 | ID | 88 | A |
| Pulsed drain current TC=25 2) | ID,pulse | 400 | A |
| Avalanche energy, single pulse I D=80 A, RGS=25 |
EAS | 480 | mJ |
| Reverse diode dv /dt I D=80 A, VDS=48 V, di /dt =200 A/s, T j,max=175 |
dv/dt | 6 | KV/ns |
| Gate source voltage T C=25 | VGS | ±20 | V |
| Power dissipation | Ptot | 214 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 175 | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
2) See figure 3
IPB06CNE8N Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPB03N03LA
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- Datasheet: IPB03N03LA
- File Size: 325335 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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