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IPB06CNE8N

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-fr...

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IPB06CNE8N: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating; ...

IPB06CNE8N Data Sheet

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Part Number:
IPB06CNE8N
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Rating Unit
Continuous Drain Current, Tc = 25 ID 100 A
Continuous Drain Current,Tc = 100 ID 88 A
Pulsed drain current TC=25 2) ID,pulse 400 A
Avalanche energy, single pulse
I D=80 A, RGS=25 		EAS 480 mJ
Reverse diode dv /dt
I D=80 A, VDS=48 V,
di /dt =200 A/s,
T j,max=175 		dv/dt 6 KV/ns
Gate source voltage T C=25 VGS ±20 V
Power dissipation Ptot 214 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
IEC climatic category; DIN IEC 68-1   55/175/56  
1) Current is limited by bondwire; with an RthJC=0.7 K/W the chip is able to carry 114 A.
2) See figure 3


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