IPB06N03LA

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 50A
Power - Max: 83W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO263-3
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 2653pF @ 15V


Features:

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated


Application

· The information herein is given to describe certain components and shall not be considered as warranted characteristics.
· Terms of delivery and rights to technical change reserved.
· We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein.
· Infineon Technologies is an approved CECC manufacturer.

Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	ID	TC=25 °C	80	A
		TC=100 °C	80	A
Pulsed drain current	ID,pulse	TC=25 °C	385	A
Avalanche energy, single pulse	EAS	ID=77 A, RGS=25 Ω	290	mJ
Reverse diode dv /dt	dv /dt	ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C	6	kV/µs
Gate source voltage	VGS		±20	V
Power dissipation	Ptot	TC=25 °C	107	W
Operating and storage temperature	Tj, Tstg		-55 ... 175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

Parameters:

Technical/Catalog Information	IPB06N03LA
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	5.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	2653pF @ 15V
Power - Max	83W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	22nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPB06N03LA IPB06N03LA IPB06N03LAINCT ND IPB06N03LAINCTND IPB06N03LAINCT