Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• Superior thermal resistance• 175 opera...
IPB06N03LAG: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) produ...
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Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 2) | 50 | A |
TC=100 | 50 | |||
Pulsed drain current | ID,pulse | TC=253) | 350 | |
Avalanche energy, single pulse | EAS | ID=45 A, R GS=25 | 225 | mJ |
Reverse diode dv /dt | dv /dt | ID=50 A, V DS=20 V, di /dt =200 A/s, T j,max=175 |
6 | kV/s |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 | 83 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |