FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 50A
Power - Max: 83W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO263-3
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 2653pF @ 15V
Parameters: | Technical/Catalog Information | IPB06N03LAT |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 2653pF @ 15V |
| Power - Max | 83W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 22nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB06N03LAT
IPB06N03LAT
IPB06N03LAXTINTR ND
IPB06N03LAXTINTRND
IPB06N03LAXTINTR
|
IPB06N03LAT Data Sheet
