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IPB070N06N

Features: • Low gate charge for fast switching applications• N-channel enhancement - normal level• 175 °C operating temperature• Avalanche rated• Pb-free lead plating, RoHS compliantSpecifications Parameter Symbol Rating Unit Continuous Drain Curren...

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IPB070N06N: Features: • Low gate charge for fast switching applications• N-channel enhancement - normal level• 175 °C operating temperature• Avalanche rated• Pb-free lead plating, ...

IPB070N06N Data Sheet

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Part Number:
IPB070N06N
Supply Ability:
5000

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Product Details

Description



Features:

• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant


Specifications

Parameter Symbol Rating Unit
Continuous Drain Current, Tc = 25 ID 80 A
Continuous Drain Current,Tc = 100 ID 80 A
Pulsed drain current TC=25 2) ID,pulse 320 A
Avalanche energy, single pulse
I D=80 A, RGS=25 		EAS 530 mJ
Reverse diode dv /dt
I D=80 A, VDS=48 V,
di /dt =200 A/s,
T j,max=175 		dv/dt 6 KV/ns
Gate source voltage T C=25 VGS ±20 V
Power dissipation Ptot 250 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
IEC climatic category; DIN IEC 68-1   55/175/56  
1) Current is limited by bondwire; with an RthJC=0.7 K/W the chip is able to carry 114 A.
2) See figure 3


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