Purchase IPB08CN10N G, In-stock IPB08CN10N G From SeekIC.
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IPB08CN10N G
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DataSheet
General Description
IPB08CN10N G Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C | 95 | A |
| TC=100 °C | 68 | |||
|
Pulsed drain current2) |
ID,pulse | TC=25 °C | 380 | |
| Avalanche energy, single pulse | EAS | ID =95 A, RGS=25 | 262 | mJ |
| Reverse diode dv /dt | dv/dt | ID =95 A, VDS=80 V, di /dt =100 A/s, Tj,max=175 °C |
6 | kV/s |
| Gate source voltage3) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 167 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
IPB08CN10N G Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPB03N03LA
PDF/DataSheet Download
- Datasheet: IPB03N03LA
- File Size: 325335 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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