Position: Home  > All Categories> Integrated Circuits (ICs) > IPB08CN10N G

IPB08CN10N G

MOSFET N-Channel MOSFET 20-200V

product image

IPB08CN10N G Picture
See larger image
SeekIC No. : 00161271 Detail

IPB08CN10N G: MOSFET N-Channel MOSFET 20-200V

IPB08CN10N G Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPB08CN10N G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 95 A
Resistance Drain-Source RDS (on) : 8.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : TO-263
Continuous Drain Current : 95 A
Resistance Drain-Source RDS (on) : 8.5 m Ohms


Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 95 A
TC=100 °C 68

Pulsed drain current2)

 ID,pulse TC=25 °C 380
Avalanche energy, single pulse EAS ID =95 A, RGS=25 262 mJ
Reverse diode dv /dt dv/dt ID =95 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot TC=25 °C 167 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Optical Inspection Equipment
AA924
A21K4B
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Audio Products
HUC1002
WM-64CT
Isolators
HCPL062N
HCPL316J
View more