FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25V
Gate Charge (Qg) @ Vgs: 13nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 50A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 63W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 1642pF @ 15V
Features: • Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt ratedSpecifications
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
ID |
TC=25 °C |
50 |
A |
| TC=100 °C |
46 |
A |
| Pulsed drain current |
ID,pulse |
TC=25 °C |
350 |
A |
| Avalanche energy, single pulse |
EAS |
ID=77 A, RGS=25 Ω |
75 |
mJ |
| Reverse diode dv /dt |
dv /dt |
ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175 °C |
6 |
kV/µs |
| Gate source voltage |
VGS |
|
±20 |
V |
| Power dissipation |
Ptot |
TC=25 °C |
63 |
W |
| Operating and storage temperature |
Tj, Tstg |
|
-55 ... 175 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
|
Parameters: | Technical/Catalog Information | IPB09N03LA |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 8.9 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1642pF @ 15V |
| Power - Max | 63W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 13nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPB09N03LA
IPB09N03LA
IPB09N03LAINCT ND
IPB09N03LAINCTND
IPB09N03LAINCT
|
IPB09N03LA Data Sheet
