IPB09N03LAG

MOSFET N-Channel MOSFET 20-200V

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SeekIC No. : 00161404 Detail

IPB09N03LAG: MOSFET N-Channel MOSFET 20-200V

floor Price/Ceiling Price

Part Number:
IPB09N03LAG
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 15.1 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 15.1 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 50 A
TC=100 46
Pulsed drain current ID,pulse TC=253) 350
Avalanche energy, single pulse EAS ID=45 A, RGS=25 75 mJ
Reverse diode dv /dt dv /dt ID=50 A, VDS=20 V,
di /dt =200 A/s,
T j,max=175
6 kV/s
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 63 W
Operating and storage temperature Tj, Tstg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  
1) J-STD20 and JESD22


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