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IPB100N08S2-07

MOSFET OptiMOS PWR TRANST 75V 100A

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SeekIC No. : 00156436 Detail

IPB100N08S2-07: MOSFET OptiMOS PWR TRANST 75V 100A

IPB100N08S2-07 Data Sheet

floor Price/Ceiling Price

US $ .72~.97 / Piece | Get Latest Price
Part Number:
IPB100N08S2-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.97
  • $.8
  • $.75
  • $.72
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 7.1 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 7.1 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25, VGS=10V
100
A
TC=100,VGS=10V
94
Pulsed drain current
IDP
TC=25
400
Avalanche energy, single pulse
EAS
I D=12 A
810
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 ... +175
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPB100N08S2-07
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs6.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB100N08S2 07
IPB100N08S207



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