MOSFET P-CH -30V -100A 4mOhms
IPB100P03P3L-04: MOSFET P-CH -30V -100A 4mOhms
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | - 16 V, + 5 V | Continuous Drain Current : | - 100 A | ||
| Resistance Drain-Source RDS (on) : | 4 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263 | Packaging : | Reel |