IPB10N03L

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Continuous drain current¹⁾ T_C=25°C I_D .....................................................73 or 63 A
Pulsed drain current T_C=25°C I_D puls ...............................................................292 A
Avalanche energy, single pulse I_D=30A, V_DD=25V, R_GS=25W E_AS ....................25 mJ
Repetitive avalanche energy, limited by T_jmax 2) E_AR .......................................10 mJ
Reverse diode dv/dt I_S=73A, V_DS=24, di/dt=200A/µs, T_jmax=175°C dv/dt ....6 kV/µs
Gate source voltage V_GS ...................................................................................±20 V
Power dissipation T_C=25°C P_tot .......................................................................107 W
Operating and storage temperature T_j , T_stg .......................................-55... +175 °C
IEC climatic category; DIN IEC 68-1 ...........................................................55/175/56