IPB160N04S2L-03

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-263
Continuous Drain Current : 160 A
Configuration : Single Quad Source
Resistance Drain-Source RDS (on) : 2.7 m Ohms


Features:

• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	ID	T C=25	160	A
		T C=100 2)	160
Pulsed drain current2)	ID,pulse	T C=25	640
Avalanche energy, single pulse	EAS	I D=80 A, RGS=25	810	mJ
	VGS		±20	V
Power dissipation	Ptot	T C=25	300	W
Operating and storage temperature	Tj, Tstg		-55 ... 175
IEC climatic category; DIN IEC 68-1			55/175/56

Parameters:

Technical/Catalog Information	IPB160N04S2L-03
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	2.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 15V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	230nC @ 5V
Package / Case	D²Pak, TO-263 (7 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB160N04S2L 03 IPB160N04S2L03