Position: Home  > All Categories> Integrated Circuits (ICs) > IPB25N06S3L-22

IPB25N06S3L-22

MOSFET OptiMOS-T2 PWR TRANS 55V 25A

product image

IPB25N06S3L-22 Picture
See larger image
SeekIC No. : 00162468 Detail

IPB25N06S3L-22: MOSFET OptiMOS-T2 PWR TRANS 55V 25A

IPB25N06S3L-22 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPB25N06S3L-22
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 21.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 21.3 m Ohms


Features:

• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 1C (HBM) EIA/JESD22-A114-B


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
25
A
T C=100 ,
VGS=10 V2)
25
Pulsed drain current2)
I D,pulse
T C=25
100
Avalanche energy, single pulse3)
EAS
I D=12A
60
mJ

Drain gate voltage2)

VDG

55

V

Gate source voltage4)
VGS
±16
V
Power dissipation
Ptot
T C=25
50
W
Operating and storage temperature
T j, T stg
-55 ... +175

IEC climatic category; DIN IEC 68-1

55/175/56



Parameters:

Technical/Catalog InformationIPB25N06S3L-22
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs21.3 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 2260pF @ 25V
Power - Max50W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB25N06S3L 22
IPB25N06S3L22



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Discrete Semiconductor Products
T508N12TOF
MUR20040
Resistors
A101G
3006P-1-205LF
Cable Assemblies
CS1W-CN114
XW2Z-500T
RF and RFID
X3C26P1-30S
1P620S
Switches
US32DMRJ
HBGQ22P-11ET
View more