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IPB60R199CP

MOSFET COOL MOS PWR TRANS MAX 650V

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IPB60R199CP: MOSFET COOL MOS PWR TRANS MAX 650V

IPB60R199CP Data Sheet

floor Price/Ceiling Price

US $ 1.74~2.44 / Piece | Get Latest Price
Part Number:
IPB60R199CP
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 10~100
  • 100~250
  • Unit Price
  • $2.44
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  • $1.74
  • Processing time
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.199 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 16 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.199 Ohms


Features:

• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
I D
T C=25
T C=100
16
10
A
Pulsed drain current2)
I D,pulse
T C=25
51
Avalanche energy, single pulse
E AS
I D=6.6 A, V DD=50 V
436
mJ
Avalanche energy, repetitive t AR2),3)
E AR
I D=6.6 A, V DD=50 V
0.66
Avalanche current, repetitive t AR2),3)
I AR
6.6
A
MOSFET dv /dt ruggedness
dv /dt
V DS=0...480 V
50
V/ns
Gate source voltage
V GS
static
AC (f >1 Hz)
±20
±30
V
Power dissipation
P tot
T C=25
139
W
Operating and storage temperature
T j, T stg
-55 ... 150



Parameters:

Technical/Catalog InformationIPB60R199CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs199 mOhm @ 9.9A, 10V
Input Capacitance (Ciss) @ Vds 1520pF @ 100V
Power - Max139W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs43nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB60R199CP
IPB60R199CP



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