Position: Home  > All Categories> Integrated Circuits (ICs) > IPB80N06S3L-06

IPB80N06S3L-06

MOSFET N-CH 55V 80A

product image

IPB80N06S3L-06 Picture
See larger image
SeekIC No. : 00162208 Detail

IPB80N06S3L-06: MOSFET N-CH 55V 80A

IPB80N06S3L-06 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPB80N06S3L-06
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 5.6 m Ohms


Features:

• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 2 (HBM) EIA/JESD22-A114-B


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
80
A
T C=100 ,
VGS=10 V2)
80
Pulsed drain current2)
I D,pulse
T C=25
320
Avalanche energy, single pulse2)
EAS
I D=80A
250
mJ

 Drain gate voltage2)

 VDG

 

 55

 V

Gate source voltage4)
VGS
±16
V
Power dissipation
Ptot
T C=25
136
W
Operating and storage temperature
T j, T stg
-55 ... +175

 IEC climatic category; DIN IEC 68-1

 

 

 55/175/56

  



Parameters:

Technical/Catalog InformationIPB80N06S3L-06
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.6 mOhm @ 56A, 10V
Input Capacitance (Ciss) @ Vds 9417pF @ 25V
Power - Max136W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs196nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N06S3L 06
IPB80N06S3L06
IPB80N06S3L 06INTR ND
IPB80N06S3L06INTRND
IPB80N06S3L-06INTR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Line Protection, Backups
BX0023
A20B-1008-0550
Circuit Protection
A50QS75-4Y
F-17*77
Filters
PICO2205A
PICO2204A
Resistors
A101G
3006P-1-205LF
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
View more