Position: Home  > All Categories> Integrated Circuits (ICs) > IPD05N03LBG

IPD05N03LBG

MOSFET N-Channel MOSFET 20-200V

product image

IPD05N03LBG Picture
See larger image
SeekIC No. : 00163235 Detail

IPD05N03LBG: MOSFET N-Channel MOSFET 20-200V

IPD05N03LBG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPD05N03LBG
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/17

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 7.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 90 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 7.5 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 50 A
TC=100 50
Pulsed drain current ID,pulse TC=25 3) 350
Avalanche energy, single pulse EAS ID=90 A, RGS=25 Ω 225 mJ
Reverse diode dv /dt dv /dt ID=90 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175 		6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 83 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Switches
US32DMRJ
HBGQ22P-11ET
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Resistors
A101G
3006P-1-205LF
Audio Products
HUC1002
WM-64CT
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more