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Specifications Parameter Symbol Conditions Value Unit Continuous drain current ID TC=252) 30 A TC=100 30 Pulsed drain current ID,pulse TC=253) 120 Avalanche energy, single pulse EAS ID=9.3 A, RGS=25 64 mJ MOSFET dv /dt ruggedn...

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IPD12N03LBG: Specifications Parameter Symbol Conditions Value Unit Continuous drain current ID TC=252) 30 A TC=100 30 Pulsed drain current ID,pulse TC=253) 12...

IPD12N03LBG Data Sheet

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Part Number:: IPD12N03LBG
Supply Ability:: 5000

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Product Details

Description

Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	ID	T_C=25²⁾	30	A
Continuous drain current	ID	T_C=100	30
Pulsed drain current	I_D,pulse	T_C=25³⁾	120
Avalanche energy, single pulse	E_AS	I_D=9.3 A, R_GS=25	64	mJ
MOSFET dv /dt ruggedness	dv /dt	I _D=30 A, V _DS=20 V, di /dt =200 A/s, T _j,max=175	6	kV/s
Gate source voltage4)	V_GS	static	±20	V
Power dissipation	P_tot	T_C=25	192	W
Operating and storage temperature	T_j, T_stg		-55 ... 150
IEC climatic category; DIN IEC 68-1			55/175/56

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