MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 6.7mOhm
IPD30N03S2L-07: MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 6.7mOhm
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
| Resistance Drain-Source RDS (on) : | 6.7 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252 | Packaging : | Reel |
| Technical/Catalog Information | IPD30N03S2L-07 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1900pF @ 25V |
| Power - Max | 136W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 68nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPD30N03S2L 07 IPD30N03S2L07 |