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MFG:INFINEON  Package Cooled:PG-TO252-3-11  D/C:`06+(pb-free)  

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Part Number: IPD78CN10N G

 

MFG: INFINEON

Package Cooled: PG-TO252-3-11

D/C: `06+(pb-free)

 

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IPD78CN10N G Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 13 A
TC=100 °C 9

Pulsed drain current2)

ID,pulse TC=25 °C 52
Avalanche energy, single pulse EAS ID =13 A, RGS=25 17 mJ
Reverse diode dv /dt dv/dt ID =13 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C
6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot TC=25 °C 31 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V

IPD78CN10N G Features

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification

IPD78CN10N G datasheet

IPD03N03LA
PDF/DataSheet Download

  • Datasheet: IPD03N03LA
  • File Size: 311361 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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