MOSFET OPTIMOS-T N-CH 55V 80A 8.4mOhms
IPD80N06S3-09: MOSFET OPTIMOS-T N-CH 55V 80A 8.4mOhms
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Features: • For fast switching converters and sync. rectification• N-channel enhanceme...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 8.4 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | IPD80N06S3-09 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 40A, 10V |
Input Capacitance (Ciss) @ Vds | 6100pF @ 25V |
Power - Max | 107W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 88nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPD80N06S3 09 IPD80N06S309 |