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IPD80N06S3-09

MOSFET OPTIMOS-T N-CH 55V 80A 8.4mOhms

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SeekIC No. : 00159740 Detail

IPD80N06S3-09: MOSFET OPTIMOS-T N-CH 55V 80A 8.4mOhms

IPD80N06S3-09 Data Sheet

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Part Number:
IPD80N06S3-09
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 8.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 8.4 m Ohms


Parameters:

Technical/Catalog InformationIPD80N06S3-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8.4 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 6100pF @ 25V
Power - Max107W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs88nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD80N06S3 09
IPD80N06S309



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