MOSFET N-CH 55V100A 2.7mOhm
IPI100N06S3L-03: MOSFET N-CH 55V100A 2.7mOhm
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 3 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current1) |
I D |
T C=25 , VGS=10 V |
100 |
A |
T C=100 , VGS=10 V2) |
100 | |||
Pulsed drain current2) |
I D,pulse |
T C=25 |
400 | |
Avalanche energy, single pulse3) |
EAS |
I D=50A |
690 |
mJ |
Drain gate voltage2) |
VDG |
|
55 |
V |
Gate source voltage4) |
VGS |
±16 |
V | |
Power dissipation |
Ptot |
T C=25 |
300 |
W |
Operating and storage temperature |
T j, T stg |
-55 ... +175 |
||
IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
Technical/Catalog Information | IPI100N06S3L-03 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 26240pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 550nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI100N06S3L 03 IPI100N06S3L03 IPI100N06S3L 03IN ND IPI100N06S3L03INND IPI100N06S3L-03IN |