IPI100P03P3L-04

MOSFET OPTIMOS-P TRNCH P-CH -30V -100A 4mOhms

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SeekIC No. : 00160280 Detail

IPI100P03P3L-04: MOSFET OPTIMOS-P TRNCH P-CH -30V -100A 4mOhms

floor Price/Ceiling Price

Part Number:
IPI100P03P3L-04
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : - 16 V, + 5 V Continuous Drain Current : - 100 A
Resistance Drain-Source RDS (on) : 4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 30 V
Package / Case : TO-262
Continuous Drain Current : - 100 A
Resistance Drain-Source RDS (on) : 4 m Ohms
Gate-Source Breakdown Voltage : - 16 V, + 5 V


Parameters:

Technical/Catalog InformationIPI100P03P3L-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs4.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 9300pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI100P03P3L 04
IPI100P03P3L04



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