MOSFET OptiMOS-T PWR TRANS 100V 50A
IPI50N10S3L-16: MOSFET OptiMOS-T PWR TRANS 100V 50A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Continuous Drain Current : | 50 A | Resistance Drain-Source RDS (on) : | 15.7 mOhms | ||
| Configuration : | Single | Maximum Operating Temperature : | + 175 C | ||
| Package / Case : | TO-262 | Packaging : | Tube |
| Technical/Catalog Information | IPI50N10S3L-16 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 15.7 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 4180pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 64nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI50N10S3L 16 IPI50N10S3L16 |