MOSFET COOL MOS PWR TRANS MAX 650V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 21 A | ||
| Resistance Drain-Source RDS (on) : | 0.165 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-262 | Packaging : | Tube |
| Technical/Catalog Information | IPI60R165CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 100V |
| Power - Max | 192W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI60R165CP IPI60R165CP |