MOSFET COOL MOS PWR TRANS MAX 650V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 16 A | ||
| Resistance Drain-Source RDS (on) : | 0.199 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-262 | Packaging : | Tube |
| Technical/Catalog Information | IPI60R199CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1520pF @ 100V |
| Power - Max | 139W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI60R199CP IPI60R199CP |