Position: Home  > All Categories> Integrated Circuits (ICs) > IPI80N06S2-08

IPI80N06S2-08

MOSFET OptiMOS PWR TRANST 55V 80A

product image

IPI80N06S2-08 Picture
See larger image
SeekIC No. : 00153381 Detail

IPI80N06S2-08: MOSFET OptiMOS PWR TRANST 55V 80A

IPI80N06S2-08 Data Sheet

floor Price/Ceiling Price

US $ .7~1.21 / Piece | Get Latest Price
Part Number:
IPI80N06S2-08
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.21
  • $1.04
  • $.78
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 8 m Ohms


Parameters:

Technical/Catalog InformationIPI80N06S2-08
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds 2860pF @ 25V
Power - Max215W
PackagingTube
Gate Charge (Qg) @ Vgs96nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI80N06S2 08
IPI80N06S208



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Resistors
A101G
3006P-1-205LF
Test Equipment
TOP853
TOP2005
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more