IPI80N06S3-07

MOSFET N-CH 55V 80A

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SeekIC No. : 00151565 Detail

IPI80N06S3-07: MOSFET N-CH 55V 80A

floor Price/Ceiling Price

US $ .42~.95 / Piece | Get Latest Price
Part Number:
IPI80N06S3-07
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 0~1
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  • 10~100
  • 100~250
  • Unit Price
  • $.95
  • $.85
  • $.68
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 6.8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 6.8 m Ohms
Package / Case : TO-262


Parameters:

Technical/Catalog InformationIPI80N06S3-07
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6.8 mOhm @ 51A, 10V
Input Capacitance (Ciss) @ Vds 7768pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI80N06S3 07
IPI80N06S307
IPI80N06S3 07IN ND
IPI80N06S307INND
IPI80N06S3-07IN



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