MFG:Infineon Technologies Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Descriptions: MOSFET N-CH 900V 6.9A TO-262
500
1.35406
677.03
| Technical/Catalog Information | IPI90R800C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 6.9A |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Power - Max | 104W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI90R800C3 IPI90R800C3 |
IPI03N03LA
PDF/DataSheet Download
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