MOSFET N-KANAL POWER MOS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
| Resistance Drain-Source RDS (on) : | 15.5 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C | 50 | A |
| TC=100 °C | 46 | A | ||
| Pulsed drain current | ID,pulse | TC=25 °C | 350 | A |
| Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 75 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 63 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | IPP09N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 9.2 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1642pF @ 15V |
| Power - Max | 63W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 5V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Request Inventory Verification |
| RoHS Status | Request Inventory Verification |
| Other Names | IPP09N03LA IPP09N03LA IPP09N03LAIN ND IPP09N03LAINND IPP09N03LAIN |