MOSFET N-CH 25V 30A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
| Resistance Drain-Source RDS (on) : | 23.1 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C | 30 | A |
| TC=100 °C | 30 | A | ||
| Pulsed drain current | ID,pulse | TC=25 °C | 210 | A |
| Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 60 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 46 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | IPP14N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 13.9 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1043pF @ 15V |
| Power - Max | 46W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 5V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPP14N03LA IPP14N03LA IPP14N03LAIN ND IPP14N03LAINND IPP14N03LAIN |