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IPP50CN10N G

MOSFET N-CH 100V 20A

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SeekIC No. : 00159619 Detail

IPP50CN10N G: MOSFET N-CH 100V 20A

IPP50CN10N G Data Sheet

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Part Number:
IPP50CN10N G
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Value Conditions Unit
Continuous drain current ID 20 TC=25 °C A
14 TC=100 °C
Pulsed drain current2) I D,pulse 80 TC=25 °C
Avalanche energy, single pulse EAS 29 ID=20 A, RGS=25 mJ
Reverse diode dv /dt dv /dt 6 I D=20 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 kV/s
Gate source voltage3) VGS ±20   V
Power dissipation Ptot 44 TC=25 °C W
Operating and storage temperature Tj, Tstg -55 ... 175  
IEC climatic category; DIN IEC 68-1   55/175/56    
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V


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