MOSFET 600V CoolMOS C6 Power Transistor
IPP60R125C6: MOSFET 600V CoolMOS C6 Power Transistor
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.125 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220-3 | Packaging : | Tube |