IPU04N03LA

MOSFET N-CH 25V 50A IPAK

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IPU04N03LA: MOSFET N-CH 25V 50A IPAK

floor Price/Ceiling Price

Part Number:
IPU04N03LA
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) @ Vgs: 41nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5199pF @ 15V
Power - Max: 115W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: P-TO251-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Power - Max: 115W
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Gate Charge (Qg) @ Vgs: 41nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: P-TO251-3
Input Capacitance (Ciss) @ Vds: 5199pF @ 15V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 50 A
TC=100 50
Pulsed drain current ID,pulse TC=25 3) 350
Avalanche energy, single pulse EAS ID=40 A, RGS=25 Ω 890 mJ
Reverse diode dv /dt dv /dt ID=50 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175
6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 115 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPU04N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 5199pF @ 15V
Power - Max115W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPU04N03LA
IPU04N03LA



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