Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Drain-Source Breakdown Voltage
: 650 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-247
Continuous Drain Current
: 60 A
Resistance Drain-Source RDS (on)
: 0.045 Ohms
Features: • Worldwide best R ds,on in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliantSpecifications
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
ID |
TC=25 |
60 |
A |
|
TC=100 |
38 |
| Pulsed drain current2) |
ID,pulse |
TC=251) |
230 |
| Avalanche energy, single pulse |
EAS |
ID=11A,VDD=50V |
1950 |
mJ |
| Avalanche energy, repetitive tAR 2),3) |
EAR |
ID=11A,VDD=50V |
3 |
|
| Avalanche current, repetitive tAR 2),3) |
IAR |
|
11 |
A |
| MOSFET dv /dt ruggedness |
dv /dt |
VDS=0...480 V
|
50 |
V/s |
| Gate source voltage |
VGS |
static |
±20 |
V |
|
AC (f >1 Hz) |
±30 |
| Power dissipation |
Ptot |
TC=25 |
431 |
W |
| Operating and storage temperature |
Tj, Tstg |
|
-55 ... 150 |
|
| Mounting torque |
|
M3 and M3.5 screws |
60 |
Ncm |
DescriptionThe IPW60R045CP is coolMOS power transistor. It is specially designed for hard switching SMPS topologies.
The features of IPW60R045CP can be summarized as:(1)Worldwide best Rds,on in TO247; (2)Ultra low gate charge; (3)Extreme dv/dt rated; (4)High peak current capability; (5)Qualified according to JEDEC for target applications; (6)Pb-free lead plating; RoHS compliant.
The absolute maximum ratings of IPW60R045CP are:(1)Continuous drain current:Tc=25°C..60A, Tc=100°C..38A; (2)Pulsed drain current,Tc=25°C..230A; (3)Avalanche energy, single pulse,ID=11A, VDD=50V:1950 mJ; (4)Avalanche energy, repetitive tAR, ID=11A, VDD=50V:3mJ; (5)Avalanche current, repetitive tAR:11A; (6)MOSFET dv /dt ruggedness,VDS=0...480V:50V/ns; (7)Gate source voltage:static..±20V, AC(f >1 Hz):±30V; (8)Power dissipation,Tc=25°C:431W; (9)Operating and storage temperature:-55°C to 150°C; (10)Mounting torque,M3 and M3.5 screws:60 Ncm.
If you want to know more information such as the electrical characteristics about the IPW60R045CP, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Parameters: | Technical/Catalog Information | IPW60R045CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 44A, 10V |
| Input Capacitance (Ciss) @ Vds | 6800pF @ 100V |
| Power - Max | 431W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPW60R045CP
IPW60R045CP
IPW60R045CPIN ND
IPW60R045CPINND
IPW60R045CPIN
|
IPW60R045CP Data Sheet
