IR255SG12HCB

The IR255SG12HCB  has some major ratings and characteristics.When parameier is VTM maximum on-state voltage,the rating is 1.25,the units is V,the test conditions is TJ=25,IT=25A.When parameier is VDRM/VRRM reverse breakdown voltage,the rating is 600 to 1200,the units is V,the test conditions is TJ=25,IDRM/IRRM=100A.When parameier is IGT Max. required DC gate currentto trigger,the rating is 80,the units is mA,the test conditions is TJ=25,anode supply=6V,resistive load.When parameier is IGT Max. required DC gate currentto trigger,the rating is 2,the units is V,the test conditions is TJ=25,anode supply=6V,resistive load.When parameier of the IR255SG12HCB is IH holding current range,the rating is 5 to 100,the units is mA,the test conditions is anode supply=6V,resistive load.When parameier is IL maximum latching current,the rating is 300,the units is mA,the test conditions is anode supply=6V,resistive load.

The IR255SG12HCB has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The chip dimensions is 250 x 250 mils .The wafer diameter is 100mm,with std.< 110 > flat.The wafer thickness is 330m±10m.The maximum width of sawing line is 130m.The reject ink dot size is 0.25 mm diameter minimum.The ink dot location is see drawing.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.