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IR51H737

Features: ·Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage·High side gate drive designed for bootstrap operation·Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us·Internal oscillator with programmable frequen...

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SeekIC No. : 004376290 Detail

IR51H737: Features: ·Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage·High side gate drive designed for bootstrap operation·Accurate timing control for both Power MOSFETs Matched...

IR51H737 Data Sheet

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Part Number:
IR51H737
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

·Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage
·High side gate drive designed for bootstrap operation
·Accurate timing control for both Power MOSFETs
   Matched delay to get 50% duty cycle
   Matched deadtime of 1.2us
·Internal oscillator with programmable frequency
·Zener clamped Vcc for offline operation
·Half-bridge output is out of phase with RT


Pinout

Connection Diagram


Specifications

Symbol Parameter Min. Max. Units
Definition
VIN High Voltage Supply -0.3 300 V
VB High Side Floating Supply Absolute Voltage -0.3 325
VO Half-Bridge Output Voltag -0.3 VIN + 0.3
VRT RT Voltage
 -0.3 VCC + 0.3
VCT TC Voltage
 -0.3 VCC + 0.3
ICC Supply Current (Note 1) --- 25 mA
IRT RT Output Current
 -5 5
dv/dt Peak Diode Recovery dv/dt --- 3.4 V/ns
PD Package Power Dissipation @ TA +25
 --- 2.00 W
RJA Thermal Resistance, Junction to Ambient --- 60 /W
TJ Junction Temperature -55 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) --- 300



Description

The IR51H737 is a high voltage, high speed, self- oscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays of the IR51H737 for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 300 volts.




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