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IR53H420

Features: · Output power MOSFETs in half-bridge configuration· High side gate drive designed for bootstrap operation· Bootstrap diode integrated into package (HD type)· Tighter initial deadtime control· Low temperature coefficient deadtime· 15.6V zener clamped Vcc for offline operation· Half-bridg...

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SeekIC No. : 004376297 Detail

IR53H420: Features: · Output power MOSFETs in half-bridge configuration· High side gate drive designed for bootstrap operation· Bootstrap diode integrated into package (HD type)· Tighter initial deadtime cont...

IR53H420 Data Sheet

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Part Number:
IR53H420
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Output power MOSFETs in half-bridge configuration
· High side gate drive designed for bootstrap operation
· Bootstrap diode integrated into package (HD type)
· Tighter initial deadtime control
· Low temperature coefficient deadtime
· 15.6V zener clamped Vcc for offline operation
· Half-bridge output is out of phase with RT
· True micropower startup
· Shutdown feature (1/6th VCC) on CT lead
· Increased undervoltage lockout hysteresis (1Volt)
· Lower power level-shifting circuit
· Lower di/dt gate drive for better noise immunity
· Excellent latch immunity on all inputs and outputs
· ESD protection on all leads
· Constant VO pulse width at startup
· Heatsink package version (P2 type)


Specifications

Symbol Definition
Minimum
Maximum
Units
VIN High voltage supply
- 0.3
500
V
VB High side floating supply
Vo - 0.3
Vo + 25
VO Half-bridge output
- 0.3
VIN + 0.3
VRT RT voltage
- 0.3
Vcc + 0.3
VCT CT voltage
- 0.3
Vcc + 0.3
Icc Supply current (note 1)
-
25
mA
IRT RT output current
- 5
5
d V/dt Peak diode recovery
-
3.50
V/ns
PD Package power dissipation @ TA £ +25°C -P2
-
-
2
3
W
RthJA Thermal resistance, junction to ambient -P2
-
-
60
40
°C/W
RthJC Thermal resistance, junction to case
(heatsink)		 -P2
-
20
TJ Junction temperature
-55
150
TS Storage temperature
-55
150
°C
TL Lead temperature (soldering, 10 seconds)
-
300



Description

The IR53H420 are complete high voltage, high speed, self-oscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit of the IR53H420 has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to the VIN (max) rating.




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