IRF3000

MOSFET N-CH 300V 1.6A 8-SOIC

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SeekIC No. : 003433241 Detail

IRF3000: MOSFET N-CH 300V 1.6A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF3000
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 300V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 730pF @ 25V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 1.6A
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Drain to Source Voltage (Vdss): 300V
Input Capacitance (Ciss) @ Vds: 730pF @ 25V
Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V


Features:

·Low Gate to Drain Charge to ReduceSwitching Losses
·Fully Characterized Capacitance Including Effective COSS  to Simplify Design, (See App. Note AN1001)
·Fully Characterized Avalanche Voltage and Current



Application

High frequency DC-DC converters


Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
ID @ TA =25 Continuous Drain Current,VGS @ 10V 1.6 A
ID @ TA =70 Continuous Drain Current,VGS @ 10V 1.3
IDM Pulsed Drain Current 13
PD @ TA =25 Power Dissipation 2.5 W
  Linear Derating Factor 0.02 W/
VGS Gate-to-Source Voltage ±30 V
dv/dt Peak Diode Recovery dv/dt 8.9 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



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