MOSFET N-CH 75V 62A TO-262
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|
Parameter |
Max. |
Unit | |
| ID @ TC= 25 | Continuous Drain Current,VGS @ 10V |
62 |
A |
| ID @ TC= 100 | Continuous Drain Current,VGS @ 10V |
44 |
A |
| IDM | Pulsed Drain Current |
320 |
A |
| PD @TC= 25 | Power Dissipation |
120 |
W |
| Linear Derating Factor |
0.8 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
290 |
mJ |
| EAS(6 sigma) | Single Pulse Avalanche Energy Tested Value |
946 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ,TSTG | Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300(1.6mm from case ) |
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007LPbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Technical/Catalog Information | IRF3007LPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 62A |
| Rds On (Max) @ Id, Vgs | 12.6 mOhm @ 48A, 10V |
| Input Capacitance (Ciss) @ Vds | 3270pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Package / Case | TO-262 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3007LPBF IRF3007LPBF |