IRF3007PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 12.6 m Ohms


Features:

· Ultra Low On-Resistance
·175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Automotive [Q101] Qualified


Application

· 42 Volts Automotive Electrical Systems
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon limited)	80	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V (See Fig.9)	56
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package limited)	75
IDM	Pulsed Drain Current	320
PD @TC = 25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	280	mJ
EAS (6 sigma)	Single Pulse Avalanche Energy Tested Value	946
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	1.1 (10)	N•m (lbf•in)

Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007PbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design of the IRF3007PbF an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF3007PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	12.6 mOhm @ 48A, 10V
Input Capacitance (Ciss) @ Vds	3270pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3007PBF IRF3007PBF