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IRF3007SPBF

MOSFET

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SeekIC No. : 00156524 Detail

IRF3007SPBF: MOSFET

IRF3007SPBF Data Sheet

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Part Number:
IRF3007SPBF
Mfg:
International Rectifier
Supply Ability:
5000

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  • 0~2110
  • Unit Price
  • $.63
  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 12.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 12.6 m Ohms


Features:

` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax


Specifications

 
Parameter
Max.
Unit
ID @ TC= 25 Continuous Drain Current,VGS @ 10V
62
A
ID @ TC= 100 Continuous Drain Current,VGS @ 10V
44
A
IDM Pulsed Drain Current
320
A
PD @TC= 25 Power Dissipation
120
W
  Linear Derating Factor
0.8
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
290
mJ
EAS(6 sigma) Single Pulse Avalanche Energy Tested Value
946
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300(1.6mm from case )



Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET of the IRF3007SPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF3007SPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs12.6 mOhm @ 48A, 10V
Input Capacitance (Ciss) @ Vds 3270pF @ 25V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3007SPBF
IRF3007SPBF



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