MOSFET N-CH 150V 21A TO-262
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| Series: | HEXFET® | Manufacturer: | International Rectifier | ||
| FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
| Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Standard | Drain to Source Voltage (Vdss): | 150V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 21A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 82 mOhm @ 12A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 95nC @ 10V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1300pF @ 25V | ||
| Power - Max: | 3.8W | Mounting Type: | Through Hole | ||
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | TO-262 |
| Technical/Catalog Information | IRF3315LPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 82 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | TO-262-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3315LPBF IRF3315LPBF |