FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 21A
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
Features: `Advanced Process Technology
`Surface Mount (IRF3315S)
`Low-profile through-hole (IRF3315
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche RatedSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC =25 |
Continuous Drain Current,VGS @ 10V |
21 |
A |
| ID @ TC =100 |
Continuous Drain Current,VGS @ 10V |
15 |
| IDM |
Pulsed Drain Current |
84 |
| PD @ TA =25 |
Power Dissipation |
3.8 |
W |
| PD @ TC =25 |
Power Dissipation |
94 |
W |
| |
Linear Derating Factor |
0.63 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
350 |
mJ |
| IAR |
Avalanche Current |
12 |
A |
| EAR |
Repetitive Avalanche Energy |
9.4 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
2.5 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315S benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF3315S provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of IRF3315S low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3315L) is available for low- profile applications.
IRF3315S Data Sheet
