IRF3415PBF

MOSFET MOSFT 150V 43A 42mOhm 133.3nC

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IRF3415PBF Picture
SeekIC No. : 00146521 Detail

IRF3415PBF: MOSFET MOSFT 150V 43A 42mOhm 133.3nC

floor Price/Ceiling Price

US $ 1.02~2.09 / Piece | Get Latest Price
Part Number:
IRF3415PBF
Mfg:
International Rectifier
Supply Ability:
5000

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  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.09
  • $1.43
  • $1.06
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  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 43 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 43 A


Pinout

  Connection Diagram


Description

The IRF3415PBF is one member of the IRF3415 family which is designed as the HEXFET Power MOSFET that has some points of features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175 operating temperature; (4)fast switching; (5)fully avalanche rated; (6)lead-free.

The absolute maximum ratings of the IRF3415PBF can be summarized as:(1)Continuous Drain Current, VGS @ 10V (TC = 25°C): 43 A;(2)Continuous Drain Current, VGS @ 10V (TC = 100°C): 30 A;(3)Pulsed Drain Current: 150 A;(4)Power Dissipation: 200 W;(5)Linear Derating Factor: 1.30 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Single Pulse Avalanche Energy: 590 mJ;(8)Avalanche Current: 22 A;(9)Repetitive Avalanche Energy: 20 mJ;(10)Peak Diode Recovery dv/dt: 5.0 V/ns.

The electrical characteristics of this device can be summarized as:(1)Drain-to-Source Breakdown Voltage: 150 V;(2)Breakdown Voltage Temp. Coefficient: 0.17 V/°C;(3)Static Drain-to-Source On-Resistance: 0.042 ;(4)Gate Threshold Voltage: 2.0 to 4.0 V;(5)Forward Transconductance: 19 s;(6)Total Gate Charge: 200 nC;(7)Reverse Transfer Capacitance: 340 pF. If you want to know more information about the IRF3415PBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationIRF3415PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs42 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3415PBF
IRF3415PBF



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