MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 87 A | ||
| Resistance Drain-Source RDS (on) : | 7.8 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-262 | Packaging : | Tube |
| Parameter |
Max. |
Units | |
| VDS | Drain-to-Source Voltage |
30 |
V |
| VGS | Drain-to-Source Voltage |
± 20 |
|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
87 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
62 |
A |
| IDM | Pulsed Drain Current |
350 |
|
| PD @TC = 25°C | Maximum Power Dissipation |
79 |
W |
| PD @TC = 100°C | Maximum Power Dissipation |
40 |
|
| Linear Derating Factor |
0.53 |
W/°C | |
| TJ | Operating Junction and |
-55 to + 175 |
°C |
| TSTG | Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |