IRF3711S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Power - Max: 3.1W
Packaging: Tube
Gate Charge (Qg) @ Vgs: 44nC @ 4.5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25° C: 110A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 2980pF @ 10V


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Server Processor Power Synchronous FET
· Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	110	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	69
IDM	Pulsed Drain Current	440
PD @TC = 25°C	Maximum Power Dissipation	120	W
PD @TA = 25°C	Maximum Power Dissipation	3.1	W
	Linear Derating Factor	0.96	W/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150	°C