IRF3717PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Resistance Drain-Source RDS (on) : 5.7 mOhms
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 20 A


Application

·Synchronous MOSFET for Notebook Processor
·Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
·Lead-Free


Pinout




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TA = 25	Continuous Drain Current,VGS @ 10V	20	A
ID @ TA = 70	Continuous Drain Current,VGS @ 10V	16
IDM	Pulsed Drain Current	160
PD @TA = 25	Power Dissipation	2.5	W
PD @TA = 70	Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
TJ, TSTG	Junction and Storage Temperature Range	-55 TO +150

Parameters:

Technical/Catalog Information	IRF3717PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	4.4 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2890pF @ 10V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3717PBF IRF3717PBF