IRF3805S-7PPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 240 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V(Silicon Limited)	240	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V(See Fig. 9)	170
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	160
IDM	Pulsed Drain Current	1000
PD @TC = 25	Maximum Power Dissipation	300	w
	Linear Derating Factor0	2.0	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	440	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	680
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and °C TSTG Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Description

Specifically designed for Automotive applications of the IRF3805S-7PPbF, this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF3805S-7PPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF3805S-7PPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	2.6 mOhm @ 140A, 10V
Input Capacitance (Ciss) @ Vds	7820pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	D²Pak, TO-263 (7 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3805S 7PPBF IRF3805S7PPBF