Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 75 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 140 A
Application·Integrated Starter Alternator
·42 Volts Automotive Electrical Systems
·Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
140 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
97 |
|
IDM |
Pulsed Drain Current |
550 |
|
PD @TC = 25 |
Power Dissipation |
330 |
W |
|
|
Linear Derating Factor |
2.2 |
W/ |
|
VGS |
Gate-to-Source Voltage |
± 20 |
V |
|
VGS |
Single Pulse Avalanche Energy |
430 |
mJ |
|
IAR |
Avalanche Current |
82 |
A |
|
EAR |
Repetitive Avalanche Energy |
See Fig.12a, 12b, 15, 16 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
|
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
|
Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
|
DescriptionDesigned specifically for Automotive applications of the IRF3808PbF, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating. This combination of the IRF3808PbF makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF3808PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 140A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 82A, 10V |
| Input Capacitance (Ciss) @ Vds | 7960pF @ 25V |
| Power - Max | 330W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 290nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3808PBF
IRF3808PBF
|
IRF3808PBF Data Sheet
