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IRF520A

MOSFET 9.2A 100V .4 OHM

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SeekIC No. : 00161613 Detail

IRF520A: MOSFET 9.2A 100V .4 OHM

IRF520A Data Sheet

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Part Number:
IRF520A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.2 Ohms


Features:

Avalanche  Rugged  Technology
Rugged  Gate  Oxide  Technology
Lower  Input  Capacitance
Improved  Gate  Charge
Extended  Safe  Operating  Area
175    Operating  TemperatureC
Lower  Leakage  Current  :  10   A (Max.)  @  VDS = 100V
Lower  RDS(ON)   :  0.155  (Typ.)



Pinout

Connection Diagram


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
ID
Continuous Drain Current (TC =25 )
 9.2 A

Continuous Drain Current (TC=100 )		 6.5
IDM Drain Current-Pulsed 37 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy 113 mJ
IAR Avalanche Current 9.2 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC =25 )
Linear Derating Factor		 45
0.3		 W

W/
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +175  
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



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